Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features

ABSTRACT

A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. Subsequently, a metal seed layer is deposited using the same techniques used to deposit the barrier layer, to avoid excessive build up of metal seed layer material on the openings to the features, with minimal sputtering of the barrier layer surface.

This application is a divisional application of U.S. application Ser.No. 12/802,701, filed on Jun. 11, 2010, which is currently pending,which is a divisional application of U.S. application Ser. No.12/459,091, filed on Jun. 25, 2009, which issued as U.S. Pat. No.7,795,138 on Sep. 14, 2010, which is a divisional application of U.S.application Ser. No. 12/075,355, filed Mar. 10, 2008, issued as U.S.Pat. No. 7,589,016 on Sep. 15, 2009, which is a divisional applicationof U.S. application Ser. No. 11/450,703, filed Jun. 9, 2006, whichissued as U.S. Pat. No. 7,381,639 on Jun. 3, 2008, which is a divisionalapplication of U.S. application Ser. No. 10/981,319, filed Nov. 3, 2004,which issued as U.S. Pat. 7,074,714 on Jul. 11, 2006, which is acontinuation application of U.S. application Ser. No. 10/922,052, filedAug. 18, 2004, which is abandoned, which is a continuation applicationof U.S. application Ser. No. 10/796,602, filed Mar. 8, 2004, whichissued as U.S. Pat. No. 6,919,275 on Jul. 19, 2005, which is acontinuation application of U.S. application Ser. No. 09/886,439, filedJun. 20, 2001, which issued as U.S. Pat. No. 6,758,947, on Jul. 6, 2004,which is a continuation application of U.S. application Ser. No.08/978,792, filed Nov. 26, 1997, which is abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention pertains to a method of sputtering a sculpturedcoating over the walls of a high aspect ratio semiconductor feature in amanner which avoids or significantly reduces the possibility of damageto or contamination of underlying surfaces.

2. Brief Description of the Background Art

As the feature size of semiconductor patterned metal features has becomeincreasingly smaller, it is particularly difficult to use the techniquesknown in the art to provide multilevel metallurgy processing. Inaddition, future technological requirements include a switch from thecurrently preferred metallurgy of aluminum to copper in someapplications, because of copper's lower resistivity and higherelectromigration resistance. The standard reactive ion etching methodfrequently used for patterning a blanket metal is particularly difficultwith copper, since there are no volatile decomposition products ofcopper at low temperatures (less than about 200° C.). The alternativedeposition lift-off techniques are also limited in applicability in acopper structure, given the susceptibility of copper to corrosion by thelift-off solvents. Therefore, the leading process for formation ofcopper-comprising devices is a damascene structure, which requires thefilling of embedded trenches and/or vias.

A typical process for producing a damascene multilevel structure havingfeature sizes in the range of 0.5 micron (μ) or less would include:blanket deposition of a dielectric material; patterning of thedielectric material to form openings; application of a barrier layerover the surface of the dielectric material; deposition of a conductivematerial onto the substrate in sufficient thickness to fill theopenings; and removal of excessive conductive material from thesubstrate surface using a chemical, mechanical, or combined techniquesuch as chemical-mechanical polishing. When the feature size is belowabout 0.25μ, typically the barrier layer and/or the conductive filllayer are deposited using a method selected from chemical vapordeposition (CVD), evaporation, electroplating, or ion depositionsputtering. Chemical vapor deposition, being completely conformal innature, tends to create voids in the center of the filled opening,particularly in the instance of high aspect ratio features. Further,contaminants from the deposition source are frequently found in thedeposited conductive material, which may affect adhesion and other filmproperties. Evaporation is successful in covering shallow features, butis generally not practical for the filling of high aspect ratiofeatures, in part because the deposition rate for the evaporationtechnique is particularly slow, and also because of poor step coverage.Electroplating has recently shown promise as a method of filling contactvias, but the crystal orientation of electroplated copper is not optimumfor the reduction of electromigration unless a proper seed layer isdeposited prior to electroplating. Sputtered copper has been used toprovide a seed layer over which a fill layer of electroplated copper orCVD copper can be applied, to improve crystal structure and improvedevice performance.

No matter which technique is used for the application of copper, priorto that application it is necessary to apply a barrier layer whichprevents the diffusion of copper into adjacent materials. The barrierlayer needs to be continuous and free from any openings which mightpermit the diffusion of copper atoms. Formation of such a continuousbarrier layer is particularly difficult when the barrier layer mustcover the surface of a feature having an aspect ratio of greater thanabout 3:1 and a feature size of 0.5 μm or less. The preferred method ofapplication of a barrier layer is physical vapor deposition (PVD) withplasma sputtering being preferred among the PVD methods, due to thehigher deposition rates obtainable using this method. Traditional plasmasputtering is used when possible, due to simplicity of the equipmentrequired to carry out deposition. In some instances, when particularlysmall feature sizes are involved, less than 0.25μ, for example, it maybe necessary to use ion-deposition plasma (IMP) sputtering techniques.

Due to the difficulty in sculpturing a coating layer, whether it be abarrier layer, or a principally conductive layer, to fit a high aspectratio, small dimensioned feature, a number of techniques have beendeveloped in an attempt to provide the properly-shaped coating layer.

U.S. Pat. No. 5,312,509 of Rudolph Eschbach, issued May 17, 1974,discloses a manufacturing system for low temperature chemical vapordeposition (CVD) of high purity metals. In particular, a semiconductorsubstrate including etched patterns is plasma cleaned, sputter coatedwith adhesion and nucleation seed layers, and a conductive layer is thenapplied using CVD. The CVD deposited metal is formed using a complexcombination of reactor and substrate conditions which are controlledusing a computer guidance system. This manufacturing system isrecommended for the CVD deposition of pure copper at low temperatures.

U.S. Pat. No. 4,514,437 to Prem Nath, issued Apr. 30, 1985, discloses amethod and apparatus for depositing thin films, such as indium tinoxide, onto substrates. The deposition comprises one step in thefabrication of electronic, semiconductor and photovoltaic devices. Anelectron beam is used to vaporize a source of solid material, andelectromagnetic energy is used to provide an ionizable plasma fromreactant gases. By passing the vaporized solid material through theplasma, it is activated prior to deposition onto a substrate. In thismanner, the solid material and the reactant gases are excited tofacilitate their interaction prior to the deposition of the newly formedcompound onto the substrate.

U.S. Pat. No. 4,944,961 to Lu et al., issued Jul. 31, 1990, describes aprocess for partially ionized beam deposition of metals or metal alloyson substrates, such as semiconductor wafers. Metal vaporized from acrucible is partially ionized at the crucible exit, and the ionizedvapor is drawn to the substrate by an imposed bias. Control of substratetemperature is said to allow non-conformal coverage of stepped surfacessuch as trenches or vias. When higher temperatures are used, steppedsurfaces are planarized. The examples given are for aluminum deposition,where the non-conformal deposition is carried out with substratetemperatures ranging between about 150° C. and about 200° C., and theplanarized deposition is carried out with substrate temperatures rangingbetween about 250° C. and about 350° C.

U.S. Pat. No. 4,976,839 to Minoru Inoue, issued Dec. 11,1990 discloses atitanium nitride barrier layer of 500 Å to 2,000 Å in thickness formedby reactive sputtering in a mixed gas including oxygen in a proportionof 1% to 5% by volume relative to the other gases, comprising an inertgas and nitrogen. The temperature of the silicon substrate duringdeposition of the titanium nitride barrier layer ranged between about350° C. and about 500° C. during the sputtering, and the resistivity ofthe titanium nitride film was “less than 100 μΩ-cm”.

U.S. Pat. No. 5,246,885 to Braren et al., issued Sep. 21, 1993, proposesthe use of a laser ablation system for the filling of high aspect ratiofeatures. Alloys, graded layers, and pure metals are deposited byablating targets comprising more than one material using a beam ofenergy to strike the target at a particular angle. The ablated materialis said to create a plasma composed primarily of ions of the ablatedmaterial, where the plasma is translated with high directionality towarda surface on which the material is to be deposited. The preferred sourceof the beam of energy is a UV laser. The heating of the depositionsurface is limited to the total energy deposited by the beam, which issaid to be minimal.

S. M. Rossnagel and J. Hopwood describe a technique of combiningconventional magnetron sputtering with a high density, inductivelycoupled RF plasma in the region between the sputtering cathode and thesubstrate in their 1993 article titled “Metal ion deposition fromionized magnetron sputtering discharge”, published in the J. Vac. Sci.Technol. B. Vol. 12, No. 1, January/February 1994. One of the examplesgiven is for titanium nitride film deposition using reactive sputtering,where a titanium cathode is used in combination with a plasma formedfrom a combination of argon and nitrogen gases. The resistivity of thefilms produced ranged from about 200 μΩ-cm to about 75 μΩ-cm, wherehigher ion energies were required to produce the lower resistivityfilms. The higher the ion energy, the more highly stressed the films,however. Peeling of the film was common at thicknesses over 700 Å, withdepositions on circuit topography features delaminating upon cleaving.

S. M. Rossnagel and J. Hopwood describe a technique which enablescontrol of the degree of directionality in the deposition of diffusionbarriers in their paper titled “Thin, high atomic weight refractory filmdeposition for diffusion barrier, adhesion layer, and seed layerapplications” J. Vac. Sci. Technol. B 14(3), May/June 1996. Inparticular, the paper describes a method of depositing tantalum (Ta)which permits the deposition of the tantalum atoms on steep sidewalls ofinterconnect vias and trenches. The method uses conventional,non-collimated magnetron sputtering at low pressures, with improveddirectionality of the depositing atoms. The improved directionality isachieved by increasing the distance between the cathode and theworkpiece surface (the throw) and by reducing the argon pressure duringsputtering. For a film deposited with commercial cathodes (AppliedMaterials Endura® class; circular planar cathode with a diameter of 30cm) and rotating magnet defined erosion paths, a throw distance of 25 cmis said to be approximately equal to an interposed collimator of aspectratio near 1.0. In the present disclosure, use of this “long throw”technique with traditional, non-collimated magnetron sputtering at lowpressures is referred to as “Gamma sputtering”. Gamma sputtering enablesthe deposition of thin, conformal coatings on sidewalls of a trenchhaving an aspect ratio of 2.8:1 for 0.5 μm-wide trench features.However, Gamma sputtered TaN films exhibit a relatively high filmresidual compressive stress which can cause a Ta film or a tantalumnitride (e.g. Ta₂N or TaN) film to peel off from the underlyingsubstrate (typically silicon oxide dielectric). In the alternative, ifthe film does not peel off, the film stress can cause feature distortionon the substrate (typically a silicon wafer) surface or even deformationof a thin wafer.

U.S. Pat. No. 5,354,712 to Ho et al., issued Oct. 11, 1994, describes amethod for forming interconnect structures for integrated circuits.Preferably, a barrier layer of a conductive material such as sputteredtitanium nitride (TiN) is deposited over a trench surface which isdefined by a dielectric layer. The TiN provides a seed layer forsubsequent metal deposition. A conformal layer of copper is selectivelydeposited over the conductive barrier layer using CVD techniques.

U.S. Pat. No. 5,585,763, issued to Joshi et al. on Dec. 17, 1996,discloses refractory metal capped low resistivity metal conductor linesand vias. In particular, the low resistivity metal is deposited usingphysical vapor deposition (e.g., evaporation or collimated sputtering),followed by chemical vapor deposition (CVD) of a refractory metal cap.Recommended interconnect metals include Al_(x)Cu_(y) (wherein the sum ofx and y is equal to one and both x and y are greater than or equal tozero). The equipment required for collimated sputtering is generallydifficult to maintain and difficult to control, since there is aconstant build up of sputtered material on the collimator over time.Collimated sputtering is described in U.S. Pat. No. 5,478,455 to Actoret al., issued Dec. 26, 1995. Collimation, whether for sputtering orevaporation, is inherently a slow deposition process, due to thereduction in sputtered flux reaching the substrate.

U.S. Pat. No. 6,605,197, of the present applicants, which issued on Aug.12, 2003, describes a method of filling features on a semiconductorworkpiece surface with copper using sputtering techniques. The surfacetemperature of the substrate is controlled within particular temperatureranges during application of the copper layer. The sputtering method isselected from a number of potential sputtering methods, including gammasputtering, coherent sputtering, IMP (ion metal plasma), and traditionalsputtering, all of which are described in detail. The content of U.S.Pat. No. 6,605,197 is hereby incorporated by reference in its entirety.

U.S. Pat. No. 5,962,923 of Xu et al., issued Oct. 5, 1999, assigned tothe Assignee of the present invention, and hereby incorporated byreference in its entirety, describes a method of forming a titaniumnitride-comprising barrier layer which acts as a carrier layer. Thecarrier layer enables the filling of apertures such as vias, holes ortrenches of high aspect ratio and the planarization of a conductive filmdeposited over the carrier layer at reduced temperatures compared toprior art methods. The Xu et al. preferred embodiment carrier layer is aTi/TiN/Ti three layered structure which is deposited using iondeposition (or ion metal plasma) sputtering techniques. FIG. 1 of thepresent application shows a schematic of a cross-sectional view of acontact via which includes the carrier layer of Xu et al. In particular,FIG. 1 shows an exemplary contact 118 formed in a high aspect ratioaperture 113. Specifically, aperture 113 has an aspect ratio of about5:1, where dimension 120 is about 0.25μ wide and dimension 122 is about1.2μ. The contact 118 includes at least two sub-elements. A carrierlayer 100, which also acts as a barrier layer, and a conductive material119 which has been deposited over the carrier layer 100, to fill thevolume of the aperture remaining after the carrier layer has beendeposited.

With reference to carrier/barrier layer 100, this three-layeredstructure is formed from a first sub-layer 112 of titanium which wassputtered from a target and partially ionized (10% to 100% ionization)prior to being deposited on the surface of both silicon dioxide layer111 and silicon base 110. The technique wherein the target material isionized after leaving the target and prior to deposition on thesubstrate is referred to as “ion deposition sputtering” or as “ion metalplasma” (IMP) sputtering. The second sub-layer 114 is a layer ofsputtered titanium which is partially ionized and reacted with nitrogento form titanium nitride before deposition over first sub-layer 112. Thethird sub-layer 116 is a layer composed of both sputtered titanium andtitanium nitride deposited in a partially ionized state.

To provide the three layer structure of carrier layer 100 as shown inFIG. 1, all three layers 100 are preferably deposited in a singlechamber in a continuous process. This may be accomplished, in the caseof a titanium based carrier layer, by following the steps of sputteringa titanium target, ionizing at least a portion of the titanium (10% to100%) before it is deposited on the substrate, attracting the ionizedtarget material to the substrate and forming the first sublayertherewith; then introducing a sufficient quantity of a reactive gas,preferably nitrogen, into the chamber as sputtering and ionizationcontinues and thereby causing all of the material sputtered from thetarget to react with the gas to form a compound film layer of TiN on thesubstrate; and then stopping the flow of reactive gas to the chamberwhile still sputtering the target and ionizing the sputtered targetmaterial to form a film layer on the substrate composed of both the basetarget material, preferably Ti and a reacted product, preferably TiN.Once the Ti/TiN sub-layer has been formed to a sufficient thickness, thepower to the system is shut off to stop the sputtering process.

The carrier/barrier layer, once deposited, provides a conformal layerhaving a thickness of approximately 800 Å, leaving an interior volume117 within the aperture to be filled with conductive material 119. Theconformal carrier/barrier layer 100 was deposited using partiallyionized sputtered titanium and titanium nitride, which partially ionizedmaterial was directed toward aperture substrates 110 and 111 using anelectric field on the substrate support platen (not shown). Theequipment used to provide the partially ionized sputtered materials andthe electric field on the substrate is described in detail in the Xu etal. patent application, and is described in more general terms below.

The conformal carrier/barrier layer 100 as depicted in the Xu et al.FIG. 1 is achieved only if an adequate electric field (bias) is appliedto the support platen (not shown) upon which the substrate sets, therebyimparting a bias to the substrate itself. Typically the substrate biaswas about −70V.

We have discovered that application of a substrate bias of about −70 Vduring the application of layer 112, causes ions to impact on underlyingsilicon substrate 110 and silicon dioxide sidewall substrate 111, andresults in a simultaneous sputtering of these surfaces. Atoms sputteredfrom silicon substrate 110 and silicon dioxide substrate 111 contaminatesurrounding surfaces of other materials as well as the composition ofbarrier layer 112. The present invention provides a method of depositingand sculpting a sputtered carrier/barrier layer 100 to the desired shapewithout significantly contaminating or disturbing surrounding surfaces.

SUMMARY OF THE INVENTION

In accordance with the present invention, we disclose a method ofapplying a sculptured layer of material on a semiconductor featuresurface using ion deposition sputtering, wherein a surface onto whichthe sculptured layer is applied is protected to resist erosion andcontamination by impacting ions of a depositing layer, said methodcomprising the steps of:

a) applying a first portion of a sculptured layer using traditionalsputtering or ion deposition sputtering, with sufficiently low substratebias that a surface onto which said sculptured layer is applied is noteroded away or contaminated in an amount which is harmful to saidsemiconductor feature performance or longevity; and

-   -   b) applying a subsequent portion of said sculptured layer using        ion deposition sputtering, with sufficiently high substrate bias        to sculpture a shape from said first portion, while depositing        additional layer material.

The method is particularly applicable to the sculpturing of barrierlayers, wetting layers and conductive layers upon semiconductor featuresurfaces. When the conductive layer is tungsten and the barrier layer istitanium, using the method to deposit the titanium layer, so that thetitanium is not contaminated by impurities sputtered off of surfacesadjacent the bottom of a contact via, for example, prevents an increasein the resistivity of the contact. When the conductive layer is aluminumand the underlying layer is a titanium wetting layer, use of the methodto deposit the titanium avoids contamination of the titanium wettinglayer by oxygen sputtered off of adjacent silicon dioxide surfacesduring the titanium. An aluminum layer subsequently applied over thenon-contaminated titanium layer will flow better over the titaniumlayer. When the conductive layer is copper and the underlying layer is atantalum barrier layer, for example, the method enables deposition of anon-contaminated and conformal tantalum barrier layer, even at smallfeature size and high aspect ratio.

A conformal tantalum barrier layer of relatively uniform thickness iscritical when the overlying layer is copper, since the surface diffusioncharacteristics of copper cause diffusion into adjacent materials unlessa proper barrier layer is used to isolate the copper. To prevent thecopper from diffusing into adjacent materials, the barrier layer used toisolate the copper must be continuous; preferably, the layer isconformal and has a minimum thickness of at least about 5 Å, dependingon feature geometry. For example, and not by way of limitation, when theaspect ratio of a feature such as a trench or a contact via is high(typically greater than about 3:1) and the feature size is small(typically the largest dimension at the bottom of the trench or via isabout 0.5 μ or less), the barrier layer thickness on the walls near thebase of the trench or via tends to thin. The higher the aspect ratio,the greater the thinning effect. Since the layer deposition isnon-conformal, if additional material is deposited to compensate for thethinning, a large overhang (shoulder) is produced inside the featurenear the opening of the feature. This overhang interferes with fillingof the feature with a conductive material and may cause an increase invia/contact or line resistance. It is necessary to use ion depositionplasma techniques to deposit a more conformal layer. In addition, toprovide a sculptured thickness of a barrier layer over the surface of afeature, it is necessary to bias the feature surface during depositionof the barrier layer.

To avoid contamination of surrounding surfaces and the barrier layer orwetting layer material itself during deposition, the barrier layer orwetting layer is deposited as follows: a first portion of material isdeposited on the substrate surface using either a traditional sputteringtechnique or using an ion deposition plasma, but in combination withsufficiently low substrate bias voltage that the surfaces toward whichionized barrier layer material is attracted are not sputtered in anamount which is harmful to device performance or longevity. Typically,the substrate bias voltage should be less than about −20 V. Excellentresults are achieved when no power is applied to the substrate supportplaten to bias the substrate. Preferably, the initial deposition iscarried out at vacuum chamber pressures greater than about 10 mT. Thebarrier layer or wetting layer can be deposited at temperatures commonlyused in the art.

After deposition of a first portion of barrier layer material, the biasvoltage is increased during the deposition of additional barrier layermaterial over the feature surface. The application of increased biasvoltage results in the resputtering (sculpturing) of the first portionof barrier layer or wetting layer material (deposited at the lowersubstrate bias voltage) while enabling a more anisotropic deposition ofnewly depositing material. Availability of the material which wasdeposited at the lower bias voltage on the surface of a trench or viaprotects the substrate surface under the barrier or wetting layermaterial during the sputtering deposition at higher bias voltage. Thisavoids breakthrough into the substrate by impacting ionized materialwhich could destroy device functionality. It also reduces or avoidscontamination of the barrier or wetting layer with material sputteredfrom adjacent surfaces during application of the barrier or wettinglayer.

The barrier layer may be sculptured using a combination of multiplenon-substrate-biased and substrate-biased deposition steps or a gradualramp up of bias power under varying conditions optimized for the featuregeometries of interest.

A conductive material seed layer, and particularly a copper seed layerapplied to the feature may be accomplished using the same sculpturingtechnique as that described above with reference to the barrier layerand wetting layer. Sculpturing of a copper seed layer is especiallyimportant when the copper fill is to be achieved by electroplating,chemical vapor deposition (CVD), PVD (for example, the copper depositiontechnique described in applicants' U.S. Pat. No. 6,605,197, which issuedon Aug. 12, 2003) or a combination of these methods. It is necessary tohave a continuous conformal seed layer. Without sculpturing of thecopper seed layer, there is typically too much overhang of depositedmaterial at the top of a contact via. This overhang leads to closure ofthe via opening prior to complete fill of the via, leaving voids insidethe contact. If there is too much sputtering of the copper seed layer,this creates an absence of seed layer at the bottom of the via. Absenceof copper seed layer causes voids to form at the bottom of the via dueto lack of copper growth in that area. (When the copper fill isdeposited using electroplating, there is a lack of current forelectroplating in areas where there is no copper seed layer.) Thepresent method provides a continuous conformal seed layer. Substratetemperature is critical during the deposition and sculpturing of acopper seed layer, to avoid dewetting of the copper from the barrierlayer surface. Preferably the substrate temperature during depositionand sculpturing of a copper seed layer is less than about 500° C., andmore preferably less than about 200° C.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic of a cross-sectional view of a contact viaincluding a multiple-layered barrier layer overlaid with a metallicconductive layer. FIG. 1 is a prior art drawing taken from U.S. Pat. No.5,962,923, which issued Oct. 5, 1999, to Xu et al., which patent isassigned to the assignee of the present invention.

FIG. 2 illustrates, in schematic format, an apparatus of the kind whichcan be used to obtain ionization of sputtered target atoms prior totheir deposition on a substrate and to attract the ionized material tothe substrate. FIG. 2 is a prior art drawing taken from U.S. Pat. No.5,962,923, of Xu et al., which issued Oct. 5, 1999.

FIG. 3 shows a schematic of a cross-sectional view of a contact viawhere a substrate bias is used to attract the ionized atoms. Theimpacting ions can erode away the base of the contact.

FIG. 4 shows a schematic of the kind shown in FIG. 3, where no substratebias is used to attract the ionized target atoms. A heavy build up ofmaterial occurs near the opening of the via. A relatively thick layer oftarget material is deposited at the bottom of the via, but the thicknessof the deposited layer on the walls of the via near the bottom is verythin.

FIG. 5 shows a schematic of the kind shown in FIGS. 3 and 4, where thetechnique of the present invention is used to ensure that the base ofthe contact is not eroded away and is not contaminated, while asculptured, even layer of deposited target material is obtained on thewalls of the via.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Application of thin barrier layers, wetting layers, and seed layers ofconductive materials to the surface of a semiconductor feature requirestailoring of the layer to the shape of the feature if optimum featureperformance is to be achieved.

Tailoring of such thin layers using physical vapor deposition (PVD)techniques has been of particular interest in recent years due to themany desirable properties of materials applied using PVD. Ion depositionsputtering, also known as IMP, has been used to enable PVD applicationof material layers in features having small feature size and high aspectratios. However, ion deposition sputtering can have adverse side effectsin terms of erosion via sputtering of underlying layers which arecontacted by the ion deposition sputtered material. Further, thematerial eroded away from the underlying layer can contaminate adjacentsurfaces of the feature.

The present method for applying an ion deposition sputtered sculpturedlayer of material on a semiconductor feature surface avoids sputteringof the substrate on which the ion deposition layer is deposited. Themethod is particularly useful in the deposition of barrier layers at thebottom of a via, where contamination from adjacent surfaces duringdeposition of the barrier layer can ultimately increase resistivity ofthe contact. The method is particularly useful in the deposition of abarrier layer when a conformal relatively uniform deposition is requiredto prevent diffusion of the material used as the conductive layer intoadjacent dielectric materials. The method is particularly useful in thedeposition of a wetting layer when contamination of the wetting layeraffects the ability of the layer to perform the wetting function. Themethod is particularly useful in the deposition of a conductive seedlayer when contamination of the seed layer prevents the formation of aproper crystal structure in subsequently deposited conductive material.Further, in instances where the feature size is small and the aspectratio is high and it is necessary to obtain a continual conformal seedlayer of conductive material over the feature surface, the ability tosculpture the conformal layer is especially advantageous, as is the casewhen the conductive material is copper.

To prevent copper from diffusing into adjacent materials, the barrierlayer used to isolate the copper needs to be continuous and ispreferably conformal and substantially uniform in thickness, having aminimum thickness of at least about 5 Å, depending on feature geometry.When the feature size is small and the aspect ratio is high, a barrierlayer applied over a feature such as a trench or contact via surfacetends to thin out toward the bottom of the feature. In order to obtainthe desired barrier layer minimum thickness on the feature walls nearthe bottom, it is necessary to use ion deposition plasma techniques todeposit the barrier layer. In addition, it is necessary to bias thesurface the barrier layer is applied to, to form the barrier layermaterial in a manner which provides a sculptured, substantially uniform,conformal coating shape. It is important to avoid contamination ofsurrounding surfaces and the barrier layer material itself duringdeposition of the barrier layer. The same is true with regard to coppercontamination of underlying layers and contamination of the copper layeritself during deposition of a copper layer over the barrier layer.Sputtering of the underlying substrate material can cause damage,destroy barrier layer properties, or poison a copper seed layer (e.g.low resistivity materials such as copper are extremely sensitive toimpurities). To avoid the sputtering of underlying substrate material,it is necessary to first sputter deposit a protective layer of materialover the surface of the feature using sufficiently low substrate biasvoltage that the surfaces toward which depositing ionized material isattracted are not sputtered in an amount which is harmful to deviceperformance or longevity. After deposition of at least a portion of thebarrier layer material, the bias voltage is increased to assist in thesculpturing of both the previously deposited and the newly depositingbarrier material. This same technique can be used during the deposit ofa copper seed layer, to avoid copper contamination of underlyingmaterial layers.

The method of the present invention is not intended to be limited toapplications in which copper is the conductive layer, however. Theavoidance of the erosion of underlying layers during the deposition ofbarrier layers and metal conductive seed layers and fill layers isapplicable to other systems such as an aluminum conductive layer used incombination with a Ti/TiN barrier layer, for example.

I. Definitions

As a preface to the detailed description, it should be noted that, asused in this specification and the appended claims, the singular forms“a”, “an”, and “the” include plural referents, unless the contextclearly dictates otherwise. Thus, for example, the term “asemiconductor” includes a variety of different materials which are knownto have the behavioral characteristics of a semiconductor, reference toa “plasma” includes a gas or gas reactants activated by an RF or DC glowdischarge, and references to “copper”, “aluminum” and “tungsten”includes alloys thereof. In particular, herein, the reference tocompounds such as “TiN”, “TaN”, “MoN”, “WN”, “TiSiN”, “TaSiN”, “MoSiN”,“WSiN”, and the like is intended to include all compounds containing acombination of the elements listed and is not intended to be limited aparticular stoichiometry.

Specific terminology of particular importance to the description of thepresent invention is defined below.

The term “aluminum” includes alloys of aluminum of the kind typicallyused in the semiconductor industry. Such alloys include aluminum-copperalloys, and aluminum-copper-silicon alloys, for example. Typically suchalloys of aluminum comprise about 0.5% copper.

The term “anisotropic deposition” refers to the deposition of materialwhich does not proceed in all directions at the same rate. If depositionoccurs exclusively in one direction, the deposition process is said tobe completely anisotropic in that direction.

The term “aspect ratio” refers to the ratio of the height dimension tothe width dimension of particular openings into which an electricalcontact is to be placed. For example, a via opening which typicallyextends in a cylindrical form through multiple layers has a height and adiameter, and the aspect ratio would be the height of the cylinderdivided by the diameter. The aspect ratio of a trench would be theheight of the trench divided by the minimal width of the trench at itsbase.

The term “copper” refers to copper and alloys thereof, wherein thecopper content of the alloy is at least 80 atomic %. The alloy maycomprise more than two elemental components.

The term “feature” refers to contacts, vias, trenches, and otherstructures which make up the topography of the substrate surface.

The term “ion-deposition plasma sputtered” and the term “ion metalplasma (IMP) refer to sputter deposition, preferably magnetron sputterdeposition, where a high density, inductively coupled RF plasma iscreated between the sputtering cathode and the substrate supportelectrode, whereby at least a portion of the sputtered emission is inthe form of ions at the time it reaches the substrate surface.

The term “ion-deposition plasma sputtered copper” or “IMP sputteredcopper” or “IMP copper” refers to a copper deposition which wassputtered using the IMP sputter deposition process.

The term “reactive ion-deposition plasma sputtering” or “reactive ionmetal plasma (IMP)” refers to ion-deposition plasma sputtering wherein areactive gas is supplied during the sputtering to react with the ionizedmaterial being sputtered, producing an ion-deposition sputtered compoundcontaining the reactive gas element.

The term “seed layer” refers to a layer which is deposited to promoteadhesion, enhance nucleation, and to obtain a desired crystalorientation during subsequent deposition (typically of the samematerial). With reference to the preferred embodiment describedsubsequently herein, where a copper seed layer is deposited using IMPsputtering means and then sculptured using the method described herein,this provides a thin seed layer which ensures proper nucleation duringsubsequent copper application by electroplating.

The term “SEM” refers to a scanning electron microscope.

The term “traditional sputtering” or “standard sputtering” refers to amethod of forming a film layer on a substrate wherein a target issputtered and the material sputtered from the target passes between thetarget and the substrate to form a film layer on the substrate, and nomeans is provided to ionize a substantial portion of the target materialsputtered from the target before it reaches the substrate. One apparatusconfigured to provide traditional sputtering is disclosed in U.S. Pat.No. 5,320,728, the disclosure of which is incorporated herein byreference. In such a traditional sputtering configuration, thepercentage of target material which is ionized is less than 10%, moretypically less than 1%, of that sputtered from the target.

II. An Apparatus for Practicing the Invention

The sculpturing method of the present invention may be carried out in aCentura® or in an Endura® Integrated Processing System available fromApplied Materials, Inc. (Santa Clara, Calif.). The Endura® system isshown and described in U.S. Pat. Nos. 5,186,718 and 5,236,868, thedisclosures of which are incorporated by reference.

To form the barrier layer structure of the present invention, theprocessing elements shown in FIG. 2 can be operated within one of thelow pressure process chambers contained within an Endura® IntegratedProcessing System. With reference to FIG. 2, the low pressure processchamber for forming the barrier layer of the present invention employs astandard sputter magnet 210 (to confine the sputtering plasma, enablingan increased sputtering rate) and a tantalum sputtering target cathode212 of about 14 inches (35.5 cm) in diameter, with a DC power 213applied to this cathode over a range from about 0.5 kW to about 8 kW.The substrate, was an 8 inch (200 mm) diameter silicon wafer, having a1.2 μm thick layer of silicon dioxide dielectric overlying the siliconwafer. The dielectric layer had been patterned to contain contact viaswhich were 0.35 μm in diameter at the bottom and 1.2 μm in height. Thesubstrate wafer was placed a distance of about 5 inches (13 cm) fromtarget cathode 212. A high density, inductively coupled RF plasma wasgenerated in the region between the target cathode 212 and the substrate218 by applying RF power 216 over a range from about 100 kHz to about 60MHZ (preferably from about 2 MHZ to about 13.56 MHZ) to a single ormultiple turn metal coil strip 214 at a wattage ranging from about 0.5kW to about 6 kW (and preferably ranging from about 1.5 kW to about 4kW). Preferably the coil strip 214 consists of less than 3 to 4 turns.

A substrate bias voltage ranging from 0 to about −300 V DC may beapplied to the substrate, typically by applying RF power 222 to theplaten 220 on which the substrate 218 sits. When a bias voltage isapplied, a DC substrate bias is created which attracts ions from theplasma to the substrate 218.

III. The Form of the Barrier Layer within the Trench or Via Example One

FIG. 3 shows a schematic of a SEM profile of silicon wafer substrate 310with a silicon dioxide dielectric layer 311 deposited thereover. Thesilicon dioxide layer 311 had been patterned to contain a via 313 havinga bottom dimension 320 of 0.35 μm and a height 322 of 1.2 μm. A tantalumbarrier layer 312 was applied over the surface 314 of the via 313 usingan ion-deposition plasma process. In particular, the DC power to thetarget was 2 kW, the RF power to the coil (at 2 MHz) was 1.5 kW, thebias to the substrate was about −70 V (at about 200 W) during the entiredeposition. The pressure in the vacuum chamber was about 40 mT, and thetemperature of the substrate at the time of deposition of the tantalumbarrier layer 312 was about 75° C. The tantalum barrier layer 312 whichwas deposited exhibited a thickness 324 of about 900 Å on the uppersurface of via 313, and a thickness on the interior walls of via 313 ofabout 150 Å, with no excessive build up at the upper opening 326 of via313. Although the layer thickness control over the upper portion of thevia wall was good, the high substrate bias caused a break-through 328 atthe bottom 316 of the via 313, so that the tantalum was very thin or notpresent at the break-through 328 location and/or was forced into theunderlying silicon substrate 310. Resputtering of depositing tantalumresulted in a build up 329 near the bottom 316 of the via 313. Thisresultant structure is not acceptable, as it typically leads to leakageand poor resistivity within the contact structure. One skilled in theart can anticipate that, depending on the feature involved, devicefunction would be very adversely affected if not destroyed.

Example Two

FIG. 4 shows a schematic of a SEM profile of a silicon wafer substrate410 with a silicon dioxide dielectric layer 411 deposited thereover. Thesilicon dioxide layer 411 had been patterned to contain a via 413 havinga bottom dimension 420 of 0.35 μm and a height 422 of 1.2 μm. A tantalumbarrier layer 412 was applied over the surface 414 of the via 413 usingan ion-deposition plasma process. In particular, the DC power to thetarget was 2 kW, the RF power to the coil (at 2 MHz) was 1.5 kW. In thisinstance there was no bias to the substrate. The pressure in the vacuumchamber was about 40 mT, and the temperature of the substrate at thetime of deposition of the tantalum barrier layer 412 was about 75° C.Tantalum was deposited for a period of about 60 seconds. The absence ofsubstrate bias resulted in the deposit of a large quantity of tantalumat the bottom 416 of via 413. The tantalum layer 412 was about 1,200 Åthick 424 on the substrate surface, about 400 Å thick on the walls ofthe via 413 near the opening 426, and thinned toward the bottom 416. Thethickness of the tantalum layer 412 was minimal (if present at all) atthe corner 415 near the bottom 416 of the via 413. The average thicknessof the tantalum layer 412 at the bottom 416 of via 413 was about 300 Å.The thin barrier layer 412 at corners 415 provided a source fordiffusion of subsequently applied copper fill (not shown) into both thesilicon dioxide dielectric layer 411 and into the silicon substrate 410.

The thinning of a titanium nitride barrier layer in contact with analuminum fill is not as critically important as the thinning of atantalum barrier layer in contact with a copper fill, since the aluminumforms an interface with a silicon dioxide insulating layer of the kindtypically used in the semiconductor industry as a dielectric. However, atitanium wetting layer is typically used, for example, as a wettinglayer underlying an aluminum fill in a contact via. If the titanium iscontaminated during deposition by materials sputtered from surroundingsurfaces, its ability to perform as a wetting layer during the aluminumfill is diminished.

When the conductive material is copper, not only is there a possiblecontamination problem due to sputtering of underlying surface onto whicha tantalum or tantalum nitride barrier layer is applied, but inaddition, if the barrier layer becomes too thin, the copper can diffuseinto the silicon dioxide dielectric layer, eventually leading to devicefailure. When copper is used as the conductive fill material, it isimportant to find a means of ensuring a more constant thickness of thecarrier/barrier layer over the entire aperture surface. This avoids theformation of an overhang at the top of a contact via which can lead toclosure of the via opening and void formation upon copper fill. Inaddition a continuous conformal barrier layer prevents the diffusion ofcopper into adjacent layers segregated from the copper by the barrierlayer. Once again, an important consideration in determining how to forma continuous conformal barrier layer or wetting layer is the amount ofcontamination of adjacent surfaces which will occur as a result of thedeposition process.

Example Three

FIG. 5 shows a schematic of a SEM profile of silicon wafer substrate 510with a silicon dioxide dielectric layer 511 deposited thereover. Thesilicon dioxide layer 511 had been patterned to contain a via 513 havinga bottom dimension 520 of 0.35 μm and a height 22 of 1.2 μm. A tantalumbarrier layer 512 was applied over the surface 514 of the via 513 usingan ion-deposition plasma process. In particular, an initial depositionof tantalum was made using a DC power to the target was 2 kW, the RFpower to the coil (at 2 MHz) was 1.5 kW, the pressure in the vacuumchamber was about 40 mT, and the substrate temperature was about 25° C.Tantalum barrier layer 512 material was applied for about 15 secondswithout the application of substrate biasing power.

The substrate bias was then applied to −60V (250 W), and additionaltantalum was applied using ion deposition plasma for a period of about45 seconds. The pressure in the vacuum chamber was about 40 mT and thesubstrate temperature was about 25° C. During this second depositionperiod, tantalum from the first deposition period was resputtered, withexcess tantalum being removed from the area of upper opening 526 of via513 and reshaped in the area near the bottom 516 of via 513. The finalvia structure was as shown in FIG. 5, where the tantalum barrier layerhas a relatively uniform thickness 524 of about 1,000 Å on the uppersubstrate surface of via 513, no overhang at opening 526, and a uniformthickness of about 150 Å on the inside walls of the via 513. There wasno damage to underlying silicon substrate 510 or to the silicon dioxidelayer 511 during deposition of barrier layer 51.

This ion deposition plasma sputtering technique can be designed to havemultiple non-biased and biased deposition steps under varying conditionsoptimized for the feature geometries of interest. The substrate bias canbe ramped up and down in a manner which permits the desired sculpturing.The technique is applicable to any ion deposition plasma sputteredlayer, including barrier layers such as: Ta, TaN, TaSiN, Mo, MoN, MoSiN,TiN, TiSiN, W, WN, and WSiN, for example; and, wetting layers such asTa, Mo, and Ti, for example. The technique also works for theapplication of a seed layer of metallic conductive materials such as Cu,Ni, Ag, Au, Al, W, and Pt, for example. In particular, applicantsdeposited a copper seed layer using this technique and found that thecopper deposition followed the same thickness profile patterns as thoseexhibited during the tantalum barrier layer deposition.

The method of the present invention is particularly beneficial when usedfor sculpting copper deposition into a contact via, since a build up onthe upper edges (shoulders) of the via opening can lead to closure ofthe opening prior to complete filling, as previously mentioned. Further,too much sputtering at the bottom of the via can resputter all of thecopper seed layer from the bottom surface, leaving a bare tantalumbarrier layer. Upon subsequent application of copper fill, the fill willnot grow where there is no seed layer, and a void is created at thebottom of the contact. For example, when the copper fill iselectroplated, the electroplated copper will not grow where there is noseed layer due to lack of current for electroplating in such areas. Thepresent sculpturing method solves these problems while avoiding thecontamination of adjacent surfaces during a copper seed layerdeposition.

The above described preferred embodiments are not intended to limit thescope of the present invention, as one skilled in the art can, in viewof the present disclosure expand such embodiments to correspond with thesubject matter of the invention claimed below.

1.-36. (canceled)
 37. A method of depositing a metal seed layer on asubstrate comprising a plurality of recessed device features, the methodcomprising: (a) depositing a first portion of a barrier layer onto thesubstrate in a manner which produces substantially no overhang at anopening present in an upper surface of the recessed device features,using sufficiently low bias that the bottom surface of the recesseddevice features in the substrate is not resputtered in any amount whichwould be harmful to device feature performance; (b) sculpturingdeposited barrier layer material using ion deposition sputtering withsufficiently high substrate bias that there is a net loss in thethickness of the barrier layer at the upper surface of the recesseddevice features, while there is a net gain in the thickness of thebarrier layer on the sidewalls and at particular locations on the bottomsurface of the recessed device features; (c) depositing a first portionof the metal seed layer onto the substrate in a manner which producessubstantially no overhang at an opening present in an upper surface ofthe recessed device features, using sufficiently low substrate bias thatthe metal seed layer deposited on a bottom surface of the recesseddevice features is not resputtered in any amount which would be harmfulto device feature performance; and (d) sculpturing deposited metal seedlayer using ion deposition sputtering with sufficiently high substratebias that there is a net loss in the thickness of the metal seed layerat the upper surface of the recessed device features, while there is anet gain in the thickness of the metal seed layer on the sidewalls andat particular locations on the bottom surface of the recessed devicefeatures.
 38. The method of claim 37, wherein the metal seed layercomprises copper.
 39. The method of claim 38, wherein the metal seedlayer is essentially copper. 40.-85. (canceled)
 86. A method inaccordance with claim 38 or claim 39, further comprising filling therecessed device features with copper by electroplating.
 87. A method inaccordance with 37, wherein the sputter depositing occurs in thepresence of an inductively coupled RF plasma.
 88. A method in accordancewith claim 37 or claim 38, or claim 39, wherein the barrier layerpresent on the surface of the recessed device features comprisestantalum.
 89. A method in accordance with claim 88, wherein the barrierlayer material is essentially tantalum.
 90. The method of claim 88,wherein the tantalum-comprising barrier layer is of variable thicknessand continuous, having a minimum thickness of 5 Å.
 91. The method ofclaim 89, wherein the tantalum barrier layer is of variable thicknessand continuous, having a minimum thickness of 5 Å.
 92. The method ofclaim 37, wherein the barrier layer deposited is selected from the groupconsisting of Ta, TaN, TaSiN, Mo, MoN, MoSiN, TiN, TiSiNi, W, WN, andWSiN.
 93. The method of claim 92, wherein said barrier layer is also awetting layer and is is selected from the group consisting of Ta, Mo andTi.